BDX53B - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDX53B
Manufacturer

ST Microelectronics
ChipWorker Part#

CW7660553
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington NPN 80V 8A 60000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

BDX53B Global Supplier

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BDX53B Specifications

Attribute	Attribute Value

Part Number	BDX53B
Manufacturer	ST Microelectronics
ChipWorker Part#	CW7660553
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	60 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	750 @3A, 3V
Input Power (Max)	60 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	60000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The BDX53B is a NPN complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
Good hFE linearity
High fT frequency

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