BDX54B - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BDX54B
Manufacturer

ST Microelectronics
ChipWorker Part#

CW66800200
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans Darlington PNP 80V 8A 60000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

BDX54B Global Supplier

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BDX54B Specifications

Attribute	Attribute Value

Part Number	BDX54B
Manufacturer	ST Microelectronics
ChipWorker Part#	CW66800200
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-80.0 V
Current Rating	-8.00 A
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	60 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	750 @3A, 3V
Input Power (Max)	60 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	60000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Description
The devices are manufactured in planar base island technology with monolithic Darlington configuration.
Features
■ Good hFE linearity
■ High fT frequency
■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
Application
■ Audio amplifiers
■ Linear and switching industrial equipment

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