CSD18542KTT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD18542KTT
Manufacturer

TI
ChipWorker Part#

CW59562375
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

TO-263 N-CH 60V 200A
Documentation

Datasheet

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CSD18542KTT Specifications

Attribute	Attribute Value

Part Number	CSD18542KTT
Manufacturer	TI
ChipWorker Part#	CW59562375
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-263-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	4.0 mΩ
Polarity	N-CH
Power Dissipation	250 W
Threshold Voltage	1.5 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	200A
Rise Time	5 ns
Input Capacitance (Ciss)	5070pF @30V(Vds)
Fall Time	21 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	250W (Tc)
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Size-Length	9.25 mm
Size-Height	4.7 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

This 60-V, 3.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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