FDB3632 ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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186 points

Part No

FDB3632
Manufacturer

Fairchild
ChipWorker Part#

CW4737650
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

Trans MOSFET N-CH 100V 12A 3Pin(2+Tab) TO-263AB T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

2136 pcs In Stock
Estimated Price

$ 1.62

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FDB3632 Specifications

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Attribute	Attribute Value

Part Number	FDB3632
Manufacturer	Fairchild
ChipWorker Part#	CW4737650
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	100 V
Current Rating	44.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	7.5 mΩ
Polarity	N-Channel
Power Dissipation	310 W
Threshold Voltage	4 V
Input Capacitance	6.00 nF
Gate Charge	84.0 nC
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	80.0 A
Rise Time	39 ns
Input Capacitance (Ciss)	6000pF @25V(Vds)
Input Power (Max)	310 W
Fall Time	46 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	310W (Tc)
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Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FDB3632 is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
Low miller charge
Low Qrr body diode
UIS Capability (single pulse and repetitive pulse)

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