FDV301N ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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271 points

Part No

FDV301N
Manufacturer

Fairchild
ChipWorker Part#

CW1180025
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

Trans MOSFET N-CH 25V 0.5A 3Pin SOT-23
Documentation

Datasheet
Ships from

Moscow
Наличие

3555000 pcs In Stock
Estimated Price

$ 0.04

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FDV301N Specifications

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Attribute	Attribute Value

Part Number	FDV301N
Manufacturer	Fairchild
ChipWorker Part#	CW1180025
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	25.0 V
Current Rating	220 mA
Power Rating	350 mW
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3.1 Ω
Polarity	N-Channel
Power Dissipation	350 mW
Threshold Voltage	850 mV
Input Capacitance	9.50 pF
Gate Charge	700 pC
Drain to Source Voltage (Vds)	25 V
Breakdown Voltage (Drain to Source)	25.0 V
Breakdown Voltage (Gate to Source)	8.00 V
Continuous Drain Current (Ids)	220 mA
Rise Time	6 ns
Input Capacitance (Ciss)	9.5pF @10V(Vds)
Input Power (Max)	350 mW
Fall Time	3.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350mW (Ta)
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Size-Length	2.92 mm
Size-Width	1.3 mm
Size-Height	0.93 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FDV301N from Fairchild is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
Drain to source voltage (Vds) of 25V
Gate to source voltage of 8V
Continuous drain current (Id) of 220mA
Power dissipation (Pd) of 350mW
Low on state resistance of 3.1ohm at Vgs 4.5V
Operating temperature range -55°C to 150°C

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