FOD817A3SD ,Optocoupler, Optoisolator - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

FOD817A3SD
Manufacturer

Fairchild
ChipWorker Part#

CW7943763
Category

Optocoupler, Optoisolator
Package

SMD-4
Description

The FOD817 is a 4Pin DIP Phototransistor Output Optocoupler The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4Pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4Pin dual in-line package.
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 1

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FOD817A3SD Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	FOD817A3SD
Manufacturer	Fairchild
ChipWorker Part#	CW7943763
Category	Optocoupler, Optoisolator
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SMD-4
Rise/Fall Time	4µs, 3µs
Input Voltage (DC)	1.20 V
Output Voltage	70 V
Number of Circuits	1 Circuit
Number of Channels	1 Channel
Number of Positions	4 Position
Forward Voltage	1.2 V
Input Current	50 mA
Power Dissipation	0.2 W
Rise Time	4 µs
Isolation Voltage	5000 Vrms
Breakdown Voltage (Collector to Emitter)	70 V
Forward Current	50 mA
Output Voltage (Max)	70 V
Input Current (Min)	50 mA
Reverse Breakdown Voltage	6 V
Maximum Forward Voltage (Max)	1.4 V
Forward Current (Max)	50 mA
Fall Time	3 µs
Fall Time (Max)	18 µs
Fall Time (Max)	18 µs
Operating Temperature (Max)	110 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 mW
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Size-Width	7 mm
Size-Height	4 mm
Operating Temperature	-55℃ ~ 110℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FOD817A3SD is a 1-channel 4-pin Phototransistor Optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It is suitable for power supply regulators, digital input and microprocessor input.
Minimum BVCEO of 70V guaranteed
850V Maximum working insulation voltage
8000V High allowable overvoltage

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