MJE3055T ,BJT Transistor, BJT - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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207 points

Part No

MJE3055T
Manufacturer

ST Microelectronics
ChipWorker Part#

CW502196
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT NPN 60V 10A 75000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.26

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MJE3055T Specifications

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Attribute	Attribute Value

Part Number	MJE3055T
Manufacturer	ST Microelectronics
ChipWorker Part#	CW502196
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	2 MHz
Voltage Rating (DC)	60.0 V
Current Rating	10.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	75 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	20 @4A, 4V
hFE Max	70
Input Power (Max)	75 W
DC Current Gain (hFE)	400
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75000 mW
	expand all
Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16

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Product Description

The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Complementary to the MJE2955T
Well-controlled hFE parameter for increased reliability

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