FQPF13N50CF ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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87 points

Part No

FQPF13N50CF
Manufacturer

Fairchild
ChipWorker Part#

CW64838469
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 500V 13A 3Pin(3+Tab) TO-220F Rail
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 1.18

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FQPF13N50CF Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	FQPF13N50CF
Manufacturer	Fairchild
ChipWorker Part#	CW64838469
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	13.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.43 Ω
Polarity	N-Channel
Power Dissipation	48 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	13.0 A
Rise Time	100 ns
Input Capacitance (Ciss)	2055pF @25V(Vds)
Input Power (Max)	48 W
Fall Time	100 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	48W (Tc)
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Size-Width	4.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The FQPF13N50CF is a QFET® FRFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
100% Avalanche tested
4.3nC Typical low gate charge
20pF Typical low Crss
100ns Typical fast recovery body diode

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