FQU13N10LTU - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FQU13N10LTU
Manufacturer

ON Semiconductor
ChipWorker Part#

CW23656393
Category

MOSFET, MOSFET Transistor
Package

TO-251-3
Description

Trans MOSFET N-CH 100V 10A 3Pin(3+Tab) IPAK Rail
Documentation

Datasheet

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FQU13N10LTU Specifications

Attribute	Attribute Value

Part Number	FQU13N10LTU
Manufacturer	ON Semiconductor
ChipWorker Part#	CW23656393
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-251-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.142 Ω
Power Dissipation	2.5 W
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	100 V
Rise Time	220 ns
Input Capacitance (Ciss)	400pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	72 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2500 mW
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Size-Length	6.6 mm
Size-Width	2.3 mm
Size-Height	6.1 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Rail, Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The FQU13N10LTU is a QFET® enhancement-mode N-channel Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
Low level gate drive requirements allowing direct operation form logic drivers
100% Avalanche tested
8.7nC Typical low gate charge
20pF Typical low Crss

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