IPB014N06N - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IPB014N06N
Manufacturer

Infineon
ChipWorker Part#

CW67209582
Category

MOSFET, MOSFET Transistor
Package

TO-263-7
Description

D2PAK N-CH 60V 180A
Documentation

Datasheet

IPB014N06N Global Supplier

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IPB014N06N Specifications

Attribute	Attribute Value

Part Number	IPB014N06N
Manufacturer	Infineon
ChipWorker Part#	CW67209582
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	7 Pin
Case/Package	TO-263-7
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	1.2 mΩ
Polarity	N-CH
Power Dissipation	214 W
Threshold Voltage	2.1 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	180A
Rise Time	18 ns
Input Capacitance (Ciss)	7800pF @30V(Vds)
Fall Time	14 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3W (Ta), 214W (Tc)
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Size-Length	10 mm
Size-Width	9.25 mm
Size-Height	4.4 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Summary of Features:
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Benefits:
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot

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