IRF1010EZPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF1010EZPBF
Manufacturer

Infineon
ChipWorker Part#

CW9423340
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 60V 84A
Documentation

Datasheet

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IRF1010EZPBF Specifications

Attribute	Attribute Value

Part Number	IRF1010EZPBF
Manufacturer	Infineon
ChipWorker Part#	CW9423340
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	140 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0085 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	4 V
Input Capacitance	2810 pF
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	84A
Rise Time	90 ns
Input Capacitance (Ciss)	2810pF @25V(Vds)
Input Power (Max)	140 W
Fall Time	54 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	16.51 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF1010EZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced process technology
Dynamic dV/dt rating
Repetitive avalanche allowed up to Tjmax

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