IRF7380PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7380PBF
Manufacturer

Infineon
ChipWorker Part#

CW13705367
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 80V 3.6A
Documentation

Datasheet

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IRF7380PBF Specifications

Attribute	Attribute Value

Part Number	IRF7380PBF
Manufacturer	Infineon
ChipWorker Part#	CW13705367
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.073 Ω
Polarity	N-Channel
Power Dissipation	2 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	80 V
Continuous Drain Current (Ids)	3.6A
Rise Time	10 ns
Input Capacitance (Ciss)	660pF @25V(Vds)
Input Power (Max)	2 W
Fall Time	17 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The IRF7380PBF is a dual N-channel HEXFET® Power MOSFET designed for high frequency DC-to-DC converter applications. It offers fully characterized capacitance including effective COSS to simplify design.

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