IRF7465PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7465PBF
Manufacturer

Infineon
ChipWorker Part#

CW16328875
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

SOIC N-CH 150V 1.9A
Documentation

Datasheet

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IRF7465PBF Specifications

Attribute	Attribute Value

Part Number	IRF7465PBF
Manufacturer	Infineon
ChipWorker Part#	CW16328875
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.28 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	5.5 V
Drain to Source Voltage (Vds)	150 V
Continuous Drain Current (Ids)	1.9A
Rise Time	1.2 ns
Input Capacitance (Ciss)	330pF @25V(Vds)
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Rail, Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7465PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency DC-to-DC converters.
Low gate-to-drain charge to reduce switching losses
Fully characterized capacitance including effective COSS to simplify design

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