ISO7241CQDWRQ1 - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ISO7241CQDWRQ1
Manufacturer

TI
ChipWorker Part#

CW19015824
Category

Interface Isolator, Digital Isolator
Package

SOIC-16
Description

Digital Isolator, 45ns, 3.15V, 5.5V, SOIC, 16Pins
Documentation

Datasheet

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ISO7241CQDWRQ1 Specifications

Attribute	Attribute Value

Part Number	ISO7241CQDWRQ1
Manufacturer	TI
ChipWorker Part#	CW19015824
Category	Interface Isolator, Digital Isolator
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	SOIC-16
Supply Voltage (DC)	3.30 V, 5.00 V
Rise/Fall Time	2 ns
Number of Channels	4 Channel
Number of Positions	16 Position
Data Rate	25.0 Mbps
Isolation Voltage	4000 Vpk
Thermal Shutdown	No
Fall Time (Max)	2 ns
Fall Time (Max)	2 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	3.15V ~ 5.5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	3.15 V
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Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The ISO7241CQDWRQ1 is a quad-channel Digital Isolator with multiple channel configurations and output enable functions. This device has logic input and output buffers separated by TI"s silicon dioxide (SiO2) isolation barrier. Used in conjunction with isolated power supplies, these devices block high voltage, isolate grounds and prevent noise currents from entering the local ground and interfering with or damaging sensitive circuitry. The ISO7241 has three channels the same direction and one channel in opposition. It has TTL input thresholds and a noise-filter at the input that prevents transient pulses from being passed to the output of the device.
1ns Maximum low channel-to-channel output skew
2ns Maximum low pulse-width distortion (PWD)
1ns Typical at 150Mbps low jitter content
High electromagnetic immunity (EMI)
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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