IXBX25N250 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXBX25N250
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW48670733
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 2500V 55A 300000mW 3Pin(3+Tab) PLUS 247
Documentation

Datasheet

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IXBX25N250 Specifications

Attribute	Attribute Value

Part Number	IXBX25N250
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW48670733
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	300000 mW
Breakdown Voltage (Collector to Emitter)	2500 V
Reverse recovery time	1.6 µs
Input Power (Max)	300 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This powerful and secure IXBX25N250 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 300000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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