IXFK24N100 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFK24N100
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW70998466
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

TO-264AA N-CH 1000V 24A
Documentation

Datasheet

IXFK24N100 Global Supplier

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IXFK24N100 Specifications

Attribute	Attribute Value

Part Number	IXFK24N100
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW70998466
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	1.00 kV
Current Rating	24.0 A
Power Rating	560 W
Drain to Source Resistance (on) (Rds)	390 mΩ
Polarity	N-CH
Power Dissipation	560 W
Drain to Source Voltage (Vds)	1000 V
Continuous Drain Current (Ids)	24.0 A
Rise Time	35 ns
Input Capacitance (Ciss)	8700pF @25V(Vds)
Input Power (Max)	560 W
Fall Time	21 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	560W (Tc)
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Size-Height	26.16 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Ixys Corporation"s IXFK24N100 power MOSFET can provide a solution. Its maximum power dissipation is 560000 mW. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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