IXGH25N160 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGH25N160
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW57084800
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1600V 75A 300000mW 3Pin(3+Tab) TO-247
Documentation

Datasheet

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IXGH25N160 Specifications

Attribute	Attribute Value

Part Number	IXGH25N160
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW57084800
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	300000 mW
Breakdown Voltage (Collector to Emitter)	1600 V
Input Power (Max)	300 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This IXGH25N160 IGBT transistor from Ixys Corporation will work perfectly in your circuit. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 1600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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