IXGN200N60B3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGN200N60B3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW14456630
Category

IGBT Transistor, IGBT Module
Package

SOT-227-4
Description

Trans IGBT Chip N-CH 600V 300A 830000mW 4Pin SOT-227B
Documentation

Datasheet

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IXGN200N60B3 Specifications

Attribute	Attribute Value

Part Number	IXGN200N60B3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW14456630
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Rating	830 W
Number of Positions	4 Position
Power Dissipation	830 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Capacitance (Cies)	26nF @25V
Input Power (Max)	830 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	830000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

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