JANTX2N3439 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTX2N3439
Manufacturer

Microsemi
ChipWorker Part#

CW59470044
Category

BJT Transistor, BJT
Package

TO-39-3
Description

Trans GP BJT NPN 350V 1A 3Pin TO-39
Documentation

Datasheet

JANTX2N3439 Global Supplier

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JANTX2N3439 Specifications

Attribute	Attribute Value

Part Number	JANTX2N3439
Manufacturer	Microsemi
ChipWorker Part#	CW59470044
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-39-3
Power Dissipation	800 mW
Breakdown Voltage (Collector to Emitter)	350 V
hFE Min	40 @20mA, 10V
hFE Max	160 @20mA, 10V
Input Power (Max)	800 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	800 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bag
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA* ** packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

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