MMBTA13LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBTA13LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1809800
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 30V 0.3A
Documentation

Datasheet

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MMBTA13LT1G Specifications

Attribute	Attribute Value

Part Number	MMBTA13LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1809800
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	125 MHz
Voltage Rating (DC)	30.0 V
Current Rating	300 mA
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	30 V
Continuous Collector Current	0.3A
hFE Min	10000 @100mA, 5V
Input Power (Max)	225 mW
DC Current Gain (hFE)	10000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	125MHz (Min)
Power Dissipation (Max)	300 mW
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Size-Length	3.04 mm
Size-Width	1.3 mm
Size-Height	1.01 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MMBTA13LT1G is a NPN bipolar Darlington Transistor designed for use in switching applications such as print hammer, relay, solenoid and lamp drivers. The device is housed in the package which is designed for lower power surface-mount applications.
Low RDS (ON) provides higher efficiency and extends battery life
Saves board space
AEC-Q101 qualified and PPAP capable

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