MRFX1K80HR5 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MRFX1K80HR5
Manufacturer

NXP
ChipWorker Part#

CW46599536
Category

BJT Transistor, BJT
Package

NI-1230-4H
Description

Trans RF MOSFET N-CH 179V 5Pin NI-1230H T/R
Documentation

Datasheet

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MRFX1K80HR5 Specifications

Attribute	Attribute Value

Part Number	MRFX1K80HR5
Manufacturer	NXP
ChipWorker Part#	CW46599536
Category	BJT Transistor, BJT
Documentation	Datasheet
Number of Pins	5 Pin
Case/Package	NI-1230-4H
Frequency	1.8MHz ~ 470MHz
Number of Positions	4 Position
Power Dissipation	2.247 kW
Drain to Source Voltage (Vds)	193 V
Output Power	1800 W
Gain	24 dB
Test Current	200 mA
Input Capacitance (Ciss)	760pF @65V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	2247000 mW
Voltage Rating	182 V
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Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Overview
The MRFX1K80H is the first device based on NXP"s new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.
The MRFX1K80H is pin-compatible (same PCB) with its plastic version MRFX1K80N, with MRFE6VP61K25H and MRFE6VP61K25N (1250 W @ 50 V), and with MRF1K50H and MRF1K50N (1500 W @ 50 V).
For additional information contact NXP Semiconductor.
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## Features
* Based on new 65 V LDMOS technology, designed for ease of use
* Characterized from 30 to 65 V for extended power range
* Unmatched input and output
* High breakdown voltage for enhanced reliability and higher efficiency architectures
* High drain-source avalanche energy absorption capability
* High ruggedness. Handles 65:1 VSWR.
* RoHS compliant
* Lower thermal resistance option in over-molded plastic package: MRFX1K80N
* Included in our product longevity program with assured supply for a minimum of 15 years after launch
**Typical Applications**
* Industrial, scientific, medical (ISM)
* Laser generation
* Plasma generation
* Particle accelerators
* MRI, RF ablation and skin treatment
* Industrial heating, welding and drying systems
* Radio and VHF TV broadcast
* Aerospace
* VHF omnidirectional range (VOR)
* HF communications
* Weather radar
## Features RF Performance Tables
### Typical Performance
**Frequency
(MHz)* | **Signal Type** | **VDD
(V)* | **Pout
(W)* | **Gps
(dB)* | **ηD
(%)*
\---|---|---|---|---|---
27 (1)| CW| 65| 1800 CW| 27.8| 75.6
64| Pulse (100 µsec, 10% Duty Cycle)| 65| 1800 Peak| 27.1| 69.5
81.36| CW| 63| 1700 CW| 24.5| 76.3
87.5-108 (2,3)| CW| 60| 1600 CW| 23.6| 82.5
123/128| Pulse (100 µsec, 10% Duty Cycle)| 65| 1800 Peak| 25.9| 69.0
144| CW| 65| 1800 CW| 23.5| 78.0
230 (4)| Pulse (100 µsec, 20% Duty Cycle)| 65| 1800 Peak| 25.1| 75.1
325| Pulse (12 µsec, 10% Duty Cycle)| 63| 1700 Peak| 22.8| 64.9
### Load Mismatch/Ruggedness
**Frequency
(MHz)* | **Signal Type** | **VSWR** | **Pin
(W)* | **Test Voltage** | **Result**
\---|---|---|---|---|---
230 (4) | Pulse
(100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 14 W Peak
(3 dB Overdrive) | 65 | No Device Degradation
1\\. Data from 27 MHz narrowband reference circuit.
2\\. Data from 87.5-108 MHz broadband reference circuit.
3\\. The values shown are the center band performance numbers across the indicated frequency range.
4\\. Data from 230 MHz narrowband production test fixture.

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