STD11NM65N ,MOSFET, MOSFET Transistor - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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54 points

Part No

STD11NM65N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW59533319
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

N-channel 650V, 0.425 Ωtyp., 11A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages
Documentation

Datasheet
Ships from

Moscow
Наличие

2500 pcs In Stock
Estimated Price

$ 0.72

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STD11NM65N Specifications

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Attribute	Attribute Value

Part Number	STD11NM65N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW59533319
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Dissipation	110 W
Drain to Source Voltage (Vds)	650 V
Rise Time	10.8 ns
Input Capacitance (Ciss)	800pF @50V(Vds)
Fall Time	47 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
	expand all
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• low gate input resistance
Applications
• Switching applications

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