STD18N55M5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD18N55M5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW7234669
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 550V 16A
Documentation

Datasheet

STD18N55M5 Global Supplier

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STD18N55M5 Specifications

Attribute	Attribute Value

Part Number	STD18N55M5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW7234669
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.18 Ω
Polarity	N-Channel
Power Dissipation	90 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	550 V
Breakdown Voltage (Drain to Source)	550 V
Continuous Drain Current (Ids)	16A
Rise Time	9.5 ns
Input Capacitance (Ciss)	1260pF @100V(Vds)
Input Power (Max)	90 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	110W (Tc)
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STD18N55M5 is a MDmesh™ V N-channel Power MOSFET based on an innovative proprietary vertical process technology with PowerMESH™ horizontal layout structure. The device has extremely low ON-resistance, which is unmatched among silicon based power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Higher VDSS rating
High dV/dt capability
Excellent switching performance
Easy to drive
100% Avalanche tested
-55 to 150°C Operating junction temperature range

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