STF16N65M5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STF16N65M5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW11694996
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 650V 12A
Documentation

Datasheet

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STF16N65M5 Specifications

Attribute	Attribute Value

Part Number	STF16N65M5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW11694996
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.23 Ω
Polarity	N-Channel
Power Dissipation	90 W
Threshold Voltage	4 V
Input Capacitance	1250 pF
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	12A
Rise Time	7 ns
Input Capacitance (Ciss)	1250pF @100V(Vds)
Input Power (Max)	25 W
Fall Time	8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.3 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STF16N65M5 is a MDmesh™ V N-channel Power MOSFET offers excellent switching performance. This Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
Worldwide best RDS (ON)
Higher VDSS rating
High dV/dt capability
Easy to drive
100% Avalanche tested

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