STF24NM60N ,MOSFET, MOSFET Transistor - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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172 points

Part No

STF24NM60N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5608480
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

STMICROELECTRONICS STF24NM60N Power MOSFET, N Channel, 17A, 600V, 0.168Ω, 10V, 3V
Documentation

Datasheet
Ships from

Moscow
Наличие

1139 pcs In Stock
Estimated Price

$ 0.56

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STF24NM60N Specifications

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Attribute	Attribute Value

Part Number	STF24NM60N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5608480
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.168 Ω
Polarity	N-Channel
Power Dissipation	30 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Rise Time	16.5 ns
Input Capacitance (Ciss)	1400pF @50V(Vds)
Input Power (Max)	30 W
Fall Time	37 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30W (Tc)
	expand all
Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	16.4 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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Product Description

The STF24NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
Low gate input resistance
100% Avalanche tested

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