STGW30H60DFB - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGW30H60DFB
Manufacturer

ST Microelectronics
ChipWorker Part#

CW1284340
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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STGW30H60DFB Specifications

Attribute	Attribute Value

Part Number	STGW30H60DFB
Manufacturer	ST Microelectronics
ChipWorker Part#	CW1284340
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	260 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	53 ns
Input Power (Max)	260 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	260 W
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Minimize the current at your gate with the STGW30H60DFB IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 260000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes field stop|trench technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

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