STS8C5H30L - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STS8C5H30L
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3678066
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SO N+P 30V 8A/5.4A
Documentation

Datasheet

STS8C5H30L Global Supplier

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STS8C5H30L Specifications

Attribute	Attribute Value

Part Number	STS8C5H30L
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3678066
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Current Rating	8.00 A
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.018 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	1.6 W
Threshold Voltage	1.6 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±16.0 V
Continuous Drain Current (Ids)	8.00 A, 4.20 A
Rise Time	35.0 ns
Input Capacitance (Ciss)	857pF @25V(Vds)
Input Power (Max)	2 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.65 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STS8C5H30L is a N/P-channel Power MOSFET for switching applications. This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N-channel) technologies. The resulting transistors show extremely high packing density for low ON-resistance and rugged avalanche characteristics.
Conduction losses reduced
Switching losses reduced
Low threshold drive
Standard outline for easy automated surface-mount assembly

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