TIP110G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP110G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW3980467
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 60V 2A
Documentation

Datasheet

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TIP110G Specifications

Attribute	Attribute Value

Part Number	TIP110G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW3980467
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	2.00 A
Output Voltage	60 V
Output Current	2 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	50 W
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	62.5℃/W (RθJA)
Continuous Collector Current	2A
hFE Min	1000 @1A, 4V
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
Input Voltage	5 V
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Compared to other transistors, the NPN TIP110G Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.

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