TIP3055G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

TIP3055G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1356539
Category

BJT Transistor, BJT
Package

TO-247-3
Description

TO-247 NPN 60V 15A
Documentation

Datasheet

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TIP3055G Specifications

Attribute	Attribute Value

Part Number	TIP3055G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1356539
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Frequency	2.5 MHz
Voltage Rating (DC)	60.0 V
Current Rating	15.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	90 W
Breakdown Voltage (Collector to Base)	70.0 V
Breakdown Voltage (Collector to Emitter)	60 V
Thermal Resistance	1.39℃/W (RθJC)
Continuous Collector Current	15A
hFE Min	20 @4A, 4V
Input Power (Max)	90 W
DC Current Gain (hFE)	5
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	90000 mW
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Size-Width	4.9 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The TIP3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
Excellent safe operating area
DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)

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