VRF151G - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

VRF151G
Manufacturer

Microsemi
ChipWorker Part#

CW66630638
Category

Transistor
Package

SMD-4
Description

Trans RF MOSFET N-CH 170V 16A 5Pin
Documentation

Datasheet

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VRF151G Specifications

Attribute	Attribute Value

Part Number	VRF151G
Manufacturer	Microsemi
ChipWorker Part#	CW66630638
Category	Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SMD-4
Frequency	175 MHz
Power Dissipation	300000 mW
Output Power	300 W
Gain	16 dB
Test Current	500 mA
Input Capacitance (Ciss)	375pF @150V(Vds)
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	300000 mW
Voltage Rating	170 V
	expand all
Material	Silicon
Product Lifecycle Status	Active
Packaging	Box
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

RF POWER VERTICAL MOSFET
The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband perfor mance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.
FEATURES
• Improved Ruggedness V(BR)DSS= 170V
• 300W with 16dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• RoHS Compliant
• 5:1 Load VSWR Capability at Specified Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• High Voltage Replacement for MRF151G

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- Surface testing

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