ZTX651 - Diodes

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

ZTX651
Manufacturer

Diodes
ChipWorker Part#

CW1321931
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

Trans GP BJT NPN 60V 2A 1500mW Automotive 3Pin E-Line
Documentation

Datasheet

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ZTX651 Specifications

Attribute	Attribute Value

Part Number	ZTX651
Manufacturer	Diodes
ChipWorker Part#	CW1321931
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	175 MHz
Voltage Rating (DC)	60.0 V
Current Rating	2.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1 W
Gain Bandwidth Product	175 MHz
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	2A
hFE Min	100
Input Power (Max)	1 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1000 mW
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Size-Length	4.77 mm
Size-Width	2.41 mm
Size-Height	4.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 200℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

If you require a general purpose BJT that can handle high voltages, then the NPN ZTX651 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.

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