BD682 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

BD682
Manufacturer

ST Microelectronics
ChipWorker Part#

CW4433226
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans Darlington PNP 100V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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BD682 Specifications

Attribute	Attribute Value

Part Number	BD682
Manufacturer	ST Microelectronics
ChipWorker Part#	CW4433226
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	-100 V
Current Rating	-4.00 A
Power Rating	40 W
Number of Positions	3 Position
Power Dissipation	40 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	750 @1.5A, 3V
Input Power (Max)	40 W
DC Current Gain (hFE)	750
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	40000 mW
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Size-Length	7.8 mm
Size-Width	2.7 mm
Size-Height	10.8 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

DESCRIPTION
The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec SOT-32 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD678, BD678A, BD680, BD680A and BD682 respectively.

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