BFP720 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

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30 points

Part No

BFP720
Manufacturer

Infineon
ChipWorker Part#

CW478783250
Package

SOT-343
Description

Low Noise Silicon Germanium Bipolar RF Transistor
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

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BFP720 Specifications

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Attribute	Attribute Value

Part Number	BFP720
Manufacturer	Infineon
ChipWorker Part#	CW478783250
Documentation	Datasheet
Mounting Style	Surface Mount
Case/Package	SOT-343
	expand all
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

Description:
The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.
Summary of Features:
High performance general purpose wideband LNA transistor
150 GHz fT-Silicon Germanium Carbon technology
Enables Best-In-Class performance for wireless applications due to high dynamic range
Transistor geometry optimized for low-current applications
Operation voltage: 1.0 V to 4.0 V
Very high gain at high frequencies and low current consumption
26 dB maximum stable gain at 1.9 GHz and only 13 mA
15 dB maximum available gain at 10 GHz and only 13 mA
Ultra low noise figure from latest SiGe:C technology
0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz
High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and low current consumption of 13 mA
Pb-free (RoHS compliant) package

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- Anti-vibration foam
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