CSD85312Q3E ,MOSFET, MOSFET Transistor - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

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64 points

Part No

CSD85312Q3E
Manufacturer

TI
ChipWorker Part#

CW41625345
Category

MOSFET, MOSFET Transistor
Package

PowerVDFN-8
Description

VSON N-CH 20V 39A
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 0.73

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CSD85312Q3E Specifications

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Attribute	Attribute Value

Part Number	CSD85312Q3E
Manufacturer	TI
ChipWorker Part#	CW41625345
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	PowerVDFN-8
Drain to Source Resistance (on) (Rds)	0.0103 Ω
Polarity	Dual N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.1 V
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	39A
Rise Time	27 ns
Input Capacitance (Ciss)	2390pF @10V(Vds)
Input Power (Max)	2.5 W
Fall Time	6 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2500 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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Product Description

The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

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