CSD88539ND - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

CSD88539ND
Manufacturer

TI
ChipWorker Part#

CW18834590
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 60V 15A
Documentation

Datasheet

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CSD88539ND Specifications

Attribute	Attribute Value

Part Number	CSD88539ND
Manufacturer	TI
ChipWorker Part#	CW18834590
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.023 Ω
Polarity	Dual N-Channel
Power Dissipation	2.1 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	15A
Rise Time	9 ns
Input Capacitance (Ciss)	741pF @30V(Vds)
Input Power (Max)	2.1 W
Fall Time	4 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2100 mW
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.75 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The CSD88539ND is a NexFET™ dual N-channel Power MOSFET designed to serve as a half bridge in low current motor control applications.
Ultra-low Qg and Qgd
Avalanche rated
Halogen-free

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