FCB11N60 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FCB11N60
Manufacturer

Fairchild
ChipWorker Part#

CW152346048
Category

High Voltage MOS Transistor
Package

TO-263
Description

FAIRCHILD SEMICONDUCTOR FCB11N60 Power MOSFET, N Channel, 11A, 600V, 320mohm, 10V, 5V
Documentation

Datasheet

FCB11N60 Global Supplier

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FCB11N60 Specifications

Attribute	Attribute Value

Part Number	FCB11N60
Manufacturer	Fairchild
ChipWorker Part#	CW152346048
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	320 mΩ
Polarity	N-Channel
Power Dissipation	125 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	11A
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Unknown
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The FCB11N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Ultra low gate charge (Qg = 40nC)
Low effective output capacitance (Coss.eff = 95pF)
100% avalanche tested

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