FDB2614 - Fairchild
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoFDB2614
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ManufacturerFairchild
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ChipWorker Part#CW11147827
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CategoryMOSFET, MOSFET Transistor
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PackageTO-263-3
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DescriptionFAIRCHILD SEMICONDUCTOR FDB2614 MOSFET Transistor, N Channel, 62A, 200V, 22.9mohm, 10V, 4V
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DocumentationDatasheet
Payment Methods and Delivery
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FDB2614 Global Supplier
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FDB2614 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | FDB2614 |
| Manufacturer | Fairchild |
| ChipWorker Part# | CW11147827 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | TO-263-3 |
| Voltage Rating (DC) | 200 V |
| Current Rating | 62.0 A |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.0229 Ω |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 7.23 nF |
| Gate Charge | 99.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 62.0 A |
| Rise Time | 284 ns |
| Input Capacitance (Ciss) | 7230pF @25V(Vds) |
| Input Power (Max) | 260 W |
| Fall Time | 162 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260W (Tc) |
| expand all | |
| Size-Length | 10.67 mm |
| Size-Width | 11.33 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |
Product Description
- The FDB2614 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
- High performance Trench technology for extremely low RDS (ON)
- Low gate charge
- High power and current handing capability
Delivery
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Ordering Information
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