FDD4141 ,MOSFET, MOSFET Transistor - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

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159 points

Part No

FDD4141
Manufacturer

Fairchild
ChipWorker Part#

CW10909169
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

Power Field-Effect Transistor, 50A I(D), 40V, 0.0187Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252, D-PAK-3
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 1

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FDD4141 Specifications

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Attribute	Attribute Value

Part Number	FDD4141
Manufacturer	Fairchild
ChipWorker Part#	CW10909169
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	69 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	10.1 mΩ
Polarity	P-Channel
Power Dissipation	2.4 W
Drain to Source Voltage (Vds)	40 V
Continuous Drain Current (Ids)	10.8 A
Rise Time	7 ns
Input Capacitance (Ciss)	2775pF @20V(Vds)
Input Power (Max)	2.4 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.4W (Ta), 69W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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Product Description

The FDD4141 is a -40V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
High performance trench technology for extremely low RDS (on)

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