FDG6317NZ - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDG6317NZ
Manufacturer

ON Semiconductor
ChipWorker Part#

CW22849021
Category

MOSFET, MOSFET Transistor
Package

SC-70-6
Description

Trans MOSFET N-CH 20V 0.7A 6Pin SC-70 T/R
Documentation

Datasheet

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FDG6317NZ Specifications

Attribute	Attribute Value

Part Number	FDG6317NZ
Manufacturer	ON Semiconductor
ChipWorker Part#	CW22849021
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.3 Ω
Power Dissipation	300 mW
Threshold Voltage	1.2 V
Drain to Source Voltage (Vds)	20 V
Rise Time	7 ns
Input Capacitance (Ciss)	66.5pF @10V(Vds)
Input Power (Max)	300 mW
Fall Time	2.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The FDG6317NZ is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package.
Low gate charge
Gate-source Zener for ESD ruggedness (1.6kV human body model)
High performance Trench technology for extremely low RDS (ON)
Compact industry standard surface-mount package

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