FDS6612A - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FDS6612A
Manufacturer

Fairchild
ChipWorker Part#

CW66064673
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 30V 8.4A 8Pin SOIC N T/R
Documentation

Datasheet

FDS6612A Global Supplier

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FDS6612A Specifications

Attribute	Attribute Value

Part Number	FDS6612A
Manufacturer	Fairchild
ChipWorker Part#	CW66064673
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	30.0 V
Current Rating	8.40 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.019 Ω
Polarity	N-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.9 V
Input Capacitance	560 pF
Gate Charge	5.40 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	8.40 A
Rise Time	5 ns
Input Capacitance (Ciss)	560pF @15V(Vds)
Input Power (Max)	1 W
Fall Time	3 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The FDS6612A is a single N-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Fast switching speed
Low gate charge
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability

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