FF50R12RT4 - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

FF50R12RT4
Manufacturer

Infineon
ChipWorker Part#

CW79778736
Category

IGBT Transistor, IGBT Module
Package

AG-34MM-1
Description

Trans IGBT Module N-CH 1200V 50A 285000mW 7Pin 34MM-1 Tray
Documentation

Datasheet

FF50R12RT4 Global Supplier

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FF50R12RT4 Specifications

Attribute	Attribute Value

Part Number	FF50R12RT4
Manufacturer	Infineon
ChipWorker Part#	CW79778736
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	7 Pin
Case/Package	AG-34MM-1
Power Rating	285 W
Power Dissipation	285 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	2.8nF @25V
Input Power (Max)	285 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	285000 mW
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Size-Height	28.8 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status

Product Description

Summary of Features:
Extended Operation Temperature T vj op
Low Switching Losses
Low V CEsat
T vj op = 150°C
V CEsat with positive Temperature Coefficient
Isolated Base Plate
Standard Housing
Benefits:
Flexibility
Optimal electrical performance
Highest reliability

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Ordering Information

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