IR2118SPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IR2118SPBF
Manufacturer

Infineon
ChipWorker Part#

CW16523526
Category

FET Driver
Package

SOIC-8
Description

MOSFET DRVR 600V 0.5A 1Out Hi/Lo Side Inv 8Pin SOIC
Documentation

Datasheet

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IR2118SPBF Specifications

Attribute	Attribute Value

Part Number	IR2118SPBF
Manufacturer	Infineon
ChipWorker Part#	CW16523526
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	10.0V (min)
Rise/Fall Time	80ns, 40ns
Number of Outputs	1 Output
Output Voltage	620 V
Output Current	200 mA
Number of Positions	8 Position
Power Dissipation	625 mW
Rise Time	130 ns
Fall Time	65 ns
Fall Time (Max)	65 ns
Fall Time (Max)	130 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	625 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IR2118SPBF is a single-channel Power MOSFET and IGBT Driver features proprietary HVIC and latch immune CMOS technologies enables ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage (dV/dt immune)
Under-voltage lockout
CMOS Schmitt-triggered inputs with pull-down
Output in phase with input
High voltage
High speed

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