IRF7351PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRF7351PBF
Manufacturer

Infineon
ChipWorker Part#

CW11511240
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC N-CH 60V 8A
Documentation

Datasheet

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IRF7351PBF Specifications

Attribute	Attribute Value

Part Number	IRF7351PBF
Manufacturer	Infineon
ChipWorker Part#	CW11511240
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2 W
Number of Channels	2 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.0137 Ω
Polarity	N-CH
Power Dissipation	2 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Continuous Drain Current (Ids)	8A
Rise Time	5.9 ns
Input Capacitance (Ciss)	1330pF @30V(Vds)
Input Power (Max)	2 W
Fall Time	6.7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRF7351PBF is a 60V dual N-channel HEXFET Power MOSFET ideal for low power motor drive systems. It is compatible with existing surface mount techniques. This synchronous rectifier MOSFET is designed for isolated DC-DC converters.
Ultra-low gate impedance
Fully characterized avalanche voltage and current
Trench MOSFET technology
±20V Gate to source voltage
0.016W/°C Linear derating factor
50A Avalanche current (IAR)
20°C/W Thermal resistance, junction to drain lead
62.5°C/W Thermal resistance, junction to ambient

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