IRFZ44NPBF ,MOSFET, MOSFET Transistor - International Rectifier
The pictures are for reference only, and the specific specifications can be found in the product manual.
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189 points
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Part NoIRFZ44NPBF
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ManufacturerInternational Rectifier
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ChipWorker Part#CW6855126
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CategoryMOSFET, MOSFET Transistor
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PackageTO-220-3
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DescriptionMOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 17.5 Milliohms; ID 49A; TO-220AB; PD 94W; -55deg
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DocumentationDatasheet
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Ships fromMoscow
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Наличие375 pcs In Stock
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Estimated Price$ 1.79
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IRFZ44NPBF Specifications
Consulting Engineer >>| Attribute | Attribute Value | |
|---|---|---|
| Part Number | IRFZ44NPBF | |
| Manufacturer | International Rectifier | |
| ChipWorker Part# | CW6855126 | |
| Category | MOSFET, MOSFET Transistor | |
| Documentation | Datasheet | |
| Mounting Style | Through Hole | |
| Number of Pins | 3 Pin | |
| Case/Package | TO-220-3 | |
| Voltage Rating (DC) | 55.0 V | |
| Current Rating | 49.0 A | |
| Number of Channels | 1 Channel | |
| Number of Positions | 3 Position | |
| Drain to Source Resistance (on) (Rds) | 17.5 mΩ | |
| Polarity | N-Channel | |
| Power Dissipation | 94 W | |
| Part Family | IRFZ44N | |
| Threshold Voltage | 2.1 V | |
| Input Capacitance | 1470pF @25V | |
| Gate Charge | 63.0 nC | |
| Drain to Source Voltage (Vds) | 55 V | |
| Breakdown Voltage (Drain to Source) | 55 V | |
| Breakdown Voltage (Gate to Source) | ±20.0 V | |
| Continuous Drain Current (Ids) | 49.0 A | |
| Rise Time | 60 ns | |
| Input Capacitance (Ciss) | 1470pF @25V(Vds) | |
| Input Power (Max) | 94 W | |
| Fall Time | 45 ns | |
| Operating Temperature (Max) | 175 ℃ | |
| Operating Temperature (Min) | -55 ℃ | |
| Power Dissipation (Max) | 94000 mW | |
| expand all | ||
| Size-Length | 10.67 mm | |
| Size-Width | 4.4 mm | |
| Size-Height | 16.51 mm | |
| Operating Temperature | -55℃ ~ 175℃ | |
| Product Lifecycle Status | Active | |
| Packaging | Tube | |
| RoHS | RoHS Compliant | |
| Lead-Free Status | Lead Free | |
| REACH SVHC Compliance | No SVHC | |
| ECCN Code | EAR99 |
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Product Description
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- The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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