IRLL3303TRPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLL3303TRPBF
Manufacturer

Infineon
ChipWorker Part#

CW10389200
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

SOT-223 N-CH 30V 6.5A
Documentation

Datasheet

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IRLL3303TRPBF Specifications

Attribute	Attribute Value

Part Number	IRLL3303TRPBF
Manufacturer	Infineon
ChipWorker Part#	CW10389200
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.031 Ω
Polarity	N-CH
Power Dissipation	1 W
Threshold Voltage	1 V
Input Capacitance	840 pF
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	6.5A
Rise Time	22 ns
Input Capacitance (Ciss)	840pF @25V(Vds)
Input Power (Max)	1 W
Fall Time	28 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.739 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRLL3303TRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
Dynamic dV/dt rating
Logic level gate drive
Ease of paralleling
Advanced process technology
Ultra-low ON-resistance
Low static drain-to-source ON-resistance

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