IXTA180N10T - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTA180N10T
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW65505855
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 100V 180A
Documentation

Datasheet

IXTA180N10T Global Supplier

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IXTA180N10T Specifications

Attribute	Attribute Value

Part Number	IXTA180N10T
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW65505855
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Case/Package	TO-263-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	6.4 mΩ
Polarity	N-CH
Power Dissipation	480 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	180A
Rise Time	54 ns
Input Capacitance (Ciss)	6900pF @25V(Vds)
Fall Time	31 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	480W (Tc)
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Size-Length	9.9 mm
Size-Width	9.2 mm
Size-Height	4.5 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

N-Channel 100V 180A (Tc) 480W (Tc) Surface Mount TO-263 (IXTA)

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