IXXH30N60B3D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXXH30N60B3D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW7665569
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 60A 270000mW Automotive 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXXH30N60B3D1 Specifications

Attribute	Attribute Value

Part Number	IXXH30N60B3D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW7665569
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	270000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	25 ns
Input Power (Max)	270 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	270000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The IXXH30N60B3D1 IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 270000 mW. It has a maximum collector emitter voltage of 600 V. This device utilizes xpt technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

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