L6569A ,FET Driver - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

L6569A
Manufacturer

ST Microelectronics
ChipWorker Part#

CW21950614
Category

FET Driver
Package

DIP-8
Description

MOSFET Driver 600V 0.275A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin Mini-PDIP
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

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L6569A Specifications

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Attribute	Attribute Value

Part Number	L6569A
Manufacturer	ST Microelectronics
ChipWorker Part#	CW21950614
Category	FET Driver
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	DIP-8
Frequency	0.2 MHz
Supply Voltage (DC)	10.0V (min)
Number of Outputs	2 Output
Output Voltage	618 V
Supply Current	25 mA
Number of Positions	8 Position
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	10V ~ 16.6V
Supply Voltage (Max)	16.6 V
Supply Voltage (Min)	10 V
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Size-Length	10.92 mm
Size-Width	6.6 mm
Size-Height	3.32 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

DESCRIPTION
The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.
The output drivers are designed to drive external n channel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25µs] to avoid cross conduction of the power devices.
Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.
■ HIGH VOLTAGE RAIL UP TO 600V
■ BCD OFF LINE TECHNOLOGY
■ INTERNAL BOOTSTRAP DIODE STRUCTURE
■ 15.6V ZENER CLAMP ON VS
■ DRIVER CURRENT CAPABILITY:
- SINK CURRENT = 270mA
- SOURCE CURRENT = 170mA
■ VERY LOW START UP CURRENT: 150µA
■ UNDER VOLTAGE LOCKOUT WITH HYSTERESIS
■ PROGRAMMABLE OSCILLATOR FREQUENCY
■ DEAD TIME 1.25µs
■ dV/dt IMMUNITY UP TO ±50V/ns
■ ESD PROTECTION

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