MJD253T4G ,BJT Transistor, BJT - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

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95 points

Part No

MJD253T4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4989792
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK PNP 100V 4A
Documentation

Datasheet
Ships from

Moscow
Наличие

729 pcs In Stock
Estimated Price

$ 0.26

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MJD253T4G Specifications

Consulting Engineer >>

Attribute	Attribute Value

Part Number	MJD253T4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4989792
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	40 MHz
Voltage Rating (DC)	-100 V
Current Rating	-4.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	12.5 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	4A
hFE Min	40 @200mA, 1V
hFE Max	180
Input Power (Max)	1.4 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1400 mW
	expand all
Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

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Product Description

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
Features
---
|
Collector-Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain
hFE = 40 (Min) @ IC= 200 mAdc
hFE= 15 (Min) @ IC = 1.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("-1" Suffix)
Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
High Current-Gain-Bandwith Product -
fT = 40MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These are PbFree Packages

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