MMBTH10LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBTH10LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8230230
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

Trans RF BJT NPN 25V 225mW Automotive 3Pin SOT-23 T/R
Documentation

Datasheet

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MMBTH10LT1G Specifications

Attribute	Attribute Value

Part Number	MMBTH10LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8230230
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	650 MHz
Voltage Rating (DC)	25.0 V
Current Rating	4.00 mA
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	25 V
hFE Min	60 @4mA, 10V
Input Power (Max)	225 mW
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	225 mW
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Size-Length	3.04 mm
Size-Width	1.4 mm
Size-Height	1.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MMBTH10LT1G is an NPN Silicon VHF/UHF Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified.
Halogen-free

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